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VJSS2026国際シンポジウムで発表

2026年9月24日 9:40 AM

Sheraton Hanoi Westホテルで開催されたVJSS2026国際シンポジウムで、ファム教授（招待講演）、Huy助教（口頭）、研究員の長田さん（ポスター）、博士課程のThuan君（ポスター）、修士課程のLong君（口頭）、大枝君（口頭）、佐藤君（ポスター）、連尾君（ポスター）が下記の発表を行いました。

[AQC-I1] Edge AI semiconductor: from materials to system integration
Pham Nam Hai

[AQC-O1] Highly effective and field-free spin-orbit torque switching of CoFeB/MgO using hybrid in-plane ferromagnet/BiSb topological insulator
Ho Hoang Huy and Pham Nam Hai

[AQC-O3] A new half-Heusler topological semimetal with high spin Hall conductivity and low surface roughness for SOT – MRAM applications
Trinh Dai Hoang Long, Ho Hoang Huy, and Pham Nam Hai

[AQC-O4] High Curie temperature up to 500 K in n-type ferromagnetic semiconductor (In,Fe)Sb grown on vicinal GaAs substrates
Shuzo Oeda, Masaaki Tanaka, Pham Nam Hai

[AQC-P1] Top-BiSb SOT-MRAM With a Conductive RuOx Interlayer for CMOS BEOL Process Compatibility
Pham Van Thuan, Ho Hoang Huy, Ohiro Fujie, Pham Nam Hai

[AQC-P3] Simulation of compute-in-memory (CIM) errors caused by variations in SOT-MRAM resistance
Yuki Osada and Pham Nam Hai

[AMD-P4] Nonreciprocity of Domain-Wall Motion Induced by Interlayer Dzyaloshinskii–Moriya Interaction in Magnetic Wire
Kota Sato, Shixuan Liang, Ruiyue Chu, Lei Han, Ho Hoang Huy, Pham Nam Hai, Cheng Song

[AMD-P5]: Investigation of Perpendicular Magnetic Anisotropy in Full ALD Pt/Co Bilayers for Three-Dimensional Race Track Memory
Kosei Tsureo, Kota Sato, Hu Yifan, Yuri Kishimoto and Pham Nam Hai

また、Thuan君はベストポスター発表賞を受賞しました。

SSDM2026国際学会で発表

2026年9月17日 10:30 PM

長崎県ので開催されたSSDM2026国際学会でM2の伊藤君が下記の発表を行いました。

[SO-PS-02-34 (Late News)]
Giant Perpendicular Magnetic Anisotropy in Mo/CoFeB/MgAl2O4 Multilayers for 5 nm CMOS process compatibility
〇Daiki Ito, Kosei Tsureo, Sho Kagami, Quang Le, Brian York, Cherngye Hwang, Xiaoyong Liu, Son Le, Maki Maeda, Tuo Fan, Yu Tao, Hisashi Takano, Hai Nam Pham

2026年秋季応用物理学会学術講演会で発表

2026年9月9日 5:44 PM

北海道大学で開催された2026年秋季応用物理学会学術講演会で助教のHuyさん、博士課程の加々美君、Thuan君、修士課程のLong君、OBの石田君が下記の発表を行いました。

[8p-E207-16] BEOL-Compatible Topological Semimetal YPtBi with High Spin-Orbit Torque Efficiency Enabled by Berry-Phase Monopole Engineering
〇 Sho Kagami, Ohiro Fujie, Quang Le, Brian York, Cherngye Hwang, Xiaoyong Liu, Son Le, Maki Maeda, Tuo Fan, Yu Tao, Hisashi Takano, Pham Nam Hai

[9a-E208-4] Enhanced spin Hall conductivity at high temperature in TaSi₂ driven by Berry-phase monopoles
〇石田乾、白倉孝典、ファムナムハイ

[11a-E208-2] Highly effective and external-field-free spin-orbit torque switching of CoFeB/MgO using hybrid in-plane ferromagnet/BiSb topological insulator
〇 Ho Hoang Huy, Pham Nam Hai

[11a-E208-3] Manufacturable Top-BiSb SOT-MRAM Using a Conductive RuOx Interlayer
〇Thuan Van Pham, Ho Hoang Huy, Pham Nam Hai

[11p-E214-8] A new half-Heusler topological semimetal for SOT – MRAM applications with improved spin Hall conductivity and low surface roughness
〇 Trinh Dai Hoang Long, Ho Hoang Huy, Pham Nam Hai

半導体物理国際学会ICPS2026で発表

2026年8月17日 1:40 PM

京王プラザホテルと工学院大学で開催された半導体物理国際学会ICPS2026に博士課程OBの西山さんとM2の大枝君が下記の発表を行いました。

[Tu-P1-D-04] Large anomalous Nernst effect in room-temperature ferromagnetic semiconductor (In,Fe)Sb
Pham Nam Hai, Kota Ejiri, Li Wentao, 〇Shuzo Oeda, Yun Jaeyeon, Masaaki Tanaka

[Tu-P2-E-04] Demonstration of MIR detector using sputter-fabricated BiSb topological insulator film
〇Hajime Nishiyama, Pham Nam Hai, Yukio Kawano

[We-A2-E-04] Optical constants (n, κ) and absorption of BiSb topological insulator in Mid-infrared region measured by RT technique
〇Hajime Nishiyama, Pham Nam Hai, Tomohiro Amemiya, Shun Hashiyada, Yukio Kawano

ISAMMA2026国際シンポジウムで招待講演

2026年7月2日 8:53 PM

韓国の釜山で開催されたISAMMA2026国際シンポジウムでPham教授が下記の招待講演を行った。

[05-7391] Pham Nam Hai, “Topological Insulator-Based Spin-Orbit-Torque Magnetic Sensor for 4 Tbit/inch² Magnetic Recording Technology”.

Intermag2026国際学会に発表

2026年4月18日 10:47 PM

イギリスのマンチェスターで開催されたIntermag2026国際学会に助教のHuyさん、博士課程の加々美君とThuan君が下記の発表を行いました。

[DS-03] Ho Hoang Huy, Li Wentao, Pham Van Thuan, Shigeyuki Hirayama, Yushi Kato, and Pham Nam Hai, “Large Spin Hall Angle in Highly-Textured Sputtered BiSb (012) Topological Insulator on Si/SiO2 Substrates Enabled by Buffer/Seed Stack”.

[DS-12] Sho Kagami, Zhang Ruixian, Daiki Ito, Quang Le, Brian York, Cherngye Hwang, Xiaoyong Liu, Son Le, Maki Maeda, Tuo Fan, Yu Tao, Hisashi Takano, Pham Nam Hai, “Giant Perpendicular Magnetic Anisotropy in Mo / Boron-rich CoFeB / MgAl2O4 Junction for p-MTJ integration to 5-7 nm CMOS Processes”.

[CS-05] Pham Van Thuan, Ho Hoang Huy, Li Wentao, Shigeyuki Hirayama, Yushi Kato, Pham Nam Hai, “Large spin Hall effect in 300C annealed BiSb topological insulator and perpendicularly magnetized CoFeB using oxide buffer/seed and interfacial layers on Si/SiO2 substrates”.