Pacifico Yokohamaで開催された国際学会SSDM2025でD1の加々美君が下記の発表を行いました。本研究成果はウェスタンデジタル社との共同研究の成果です。

[D-1-04 (Late News)]
Fabrication and Evaluation of Topological Semimetal YPtBi/Ta/CoFeB Junctions with High Spin Hall Angle for SOT-MRAM
〇Sho Kagami, Reo Yamamoto, Zhang Ruixian, Ken Ishida, Quang Le, Brian York, Cherngye Hwang, Xiaoyong Liu, Son Le, Maki Maeda, Tuo Fan, Yu Tao, Hisashi Takano, Pham Nam Hai

名城大学天白キャンパスで開催された2025年秋季応用物理学会学術講演会でD1のThuan君が下記の発表を行いました。本研究成果は日本サムスン社との共同研究の成果です。

[8p-N303-11] Large spin Hall effect in BiSb topological insulator and perpendicularly magnetized CoFeB heterojunctions with oxide buffer and interfacial layers
〇(D)Thuan Van Pham, Hoang Huy Ho, Wentao Li, S. Takahashi, Y. Kato, S. Hirayama, Nam Hai Pham

D4のZhang君が磁気記録の国際学会TMRC2025で下記の発表を行いました。本研究はウェスタンデジタル社との共同研究の成果です。

[P2-10] Zhang Ruixian, Quang Le, XiaoYong Liu, Lei Xu, Brian R.York, Cherngye Hwang, Son Le, Maki Maeda, Tuo Fan, Yu Tao, Hisashi Takano, Min Liu, Shota Namba, Pham Nam Hai. “Impact of Metal, Oxide, and Hybrid Metal-Oxide Interlayers on Spin Hall Effect in BiSb Topological Insulator and Magnetic Interfaces”, The Magnetic Recording Conference (TMRC 2025), Aug. 2025.

Pham教授、博士課程のHu Yifan君、Liu Min君、加々美君、修士課程のLi君、OBのTuo Fan氏が沖縄で開催された国際学会IcAUMS2025で下記の発表を行いました。

[22aPS-3] Y. Hu, K. Sato, R. Zhang, K. Ishida, P. N. Hai, “Growth of Co thin Films with Low Roughness by ALD for 3D Magnetic Memory”.

[22aB-3] W. Li, H. Ho Hoang, S. Takahashi, Y. Hirayama, Y. Kato, P. N. Hai, “Growth of Highly Textured BiSb Topological Insulator on Si/SiOx substrates for Spin-Orbit Torque Devices Using TiOx/ MgO Buffer Layers”.

[22pC-3] M. Liu, R. Zhang, Q. Le, B. York, C. Hwang, X. Liu, M. Gribelyuk, X. Xu, S. Le, M. Maeda, F. Tuo, Y. Tao, H. Takano, P. N. Hai, “Spin Hall sensor using topological insulator”.

[22pB-9] S. Kagami, O. Fujie, D. Ito, Q. Le, B. York, C. Hwang, X. Liu, S. Le, M. Maeda, T. Fan, Y. Tao, H. Takano, P. N. Hai, “Role of Pt and Bi on the giant spin Hall effect in topological semimetal YPtBi”.

[22pB-10] F. Tuo, Q. Le, B. R. York, C. Hwang, X. Liu, M. A. Gribelyuk, S. Le, L. Xu, J. James, J. Ortega, M. Maeda, Y. Tao, H. Takano, M. Liu, R. Zhang, S. Namba, P. N. Hai, “Doped BiSbX Topological Insulator For Spin-Orbit Torque Devices”.

[22pB-12] P. N. Hai, K. Ishida, K. Sato, “Spin Hall effect in Platinum deposited by atomic layer deposition for 3D spin-orbit torque devices”.

東京理科大学野田キャンパスで開催された2025年春季応用物理学会学術講演会でPham教授、D3のZhang君とLiu君、M2の加々美君が下記の発表を行いました。

[14p-K302-1] High performance spin Hall sensing device using BiSb topological insulator
〇(D)MIN LIU, Ruixian Zhang, Quang Le, Brian York, Cherngye Hwang, Xiaoyong Liu, Michael Gribelyuk, Xiaoyu Xu, Son Le, Maki Maeda, Tuo Fan, Yu Tao, Hisashi Takano, Pham Nam Hai

[14p-K303-10] Spin Hall effect in Platinum deposited by atomic layer deposition for 3D magnetic race-track memory
〇Namhai Pham, Ishida Ken, Kota Sato

[15p-K303-1] Study of Metal, Oxide, and Hybrid Metal-Oxide Interlayers for optimizing Spin-Orbit torque in BiSb Topological Insulator and Magnetic Interfaces
〇(D)Ruixian Zhang, Quang Le, Xiaoyong Liu, Lei Xu, Brian R. York, Cherngye Hwang, Son Le, Maki Maeda, Fan Tuo, Hisashi Takano, Min Liu, Shota Namba, Pham Nam Hai

[17p-K102-10] Effect of Pt and Bi on the spin Hall angle in topological semimetal YPtBi
〇Sho Kagami, Ohiro Fujie, Daiki Ito, Quang Le, Brian York, Cherngye Hwang, Xiaoyong Liu, Son Le, Maki Maeda, Tuo Fan, Yu Tao, Hisashi Takano, Pham Nam Hai

国際学会2025 Joint MMM-Intermagにおいて、D3のHuy君が下記の発表を行いました。本発表は日本サムスン社との共同研究の成果です。

[VP23-10] Hoang Huy Ho, Wentao Li, Shigeki Takahashi, Yoshiyuki Hirayama, Yushi Kato, Hai Pham, “Large spin orbit torque induced by high temperature annealed BiSb topological insulator on oxidized Si substrates”

新潟に開催した2024年秋季応用物理学会学術講演会でD2のHuy君とM1の李君が下記の発表を行いました。この2件の発表は日本サムスン社との共同研究の成果です。

[16a-D61-1]
Growth and evaluation of highly textured BiSb(001) topological insulator on Si/SiOx
〇L. Wentao, H. H. Huy, S. Takahashi, Y. Hirayama, Y. Kato, P. N. Hai

[16a-D61-2]
Spin Hall effect in annealed BiSb topological thin films deposited on Si/SiOx substrates
〇H. H. Huy, L. Wentao, S. Takahashi, Y. Hirayama, Y. Kato, P. N. Hai

島根県松江市に開催された国際学会ICMBE2024でPham教授が下記の発表を行いました。

[MO-B4-04] Very high Curie temperature (530 K) in (Ga,Fe)Sb ferromagnetic semiconductor grown by step-flow mode on vicinal GaAs substrates
〇Pham Nam Hai, Ken Takabayashi, Kota Ejiri, Masaaki Tanaka

Pham教授が姫路で開催したSSMD2024国際学会で下記の発表を行いました。

[J-4-04] New method for suppression of magnetic domain wall shift error in 3D magnetic domain-wall memory.
〇 Pham Nam Hai, Takanori Shirokura, Nguyen Huynh Duy Khang