イギリスのマンチェスターで開催されたIntermag2026国際学会に助教のHuyさん、博士課程の加々美君とThuan君が下記の発表を行いました。

[DS-03] Ho Hoang Huy, Li Wentao, Pham Van Thuan, Shigeyuki Hirayama, Yushi Kato, and Pham Nam Hai, “Large Spin Hall Angle in Highly-Textured Sputtered BiSb (012) Topological Insulator on Si/SiO2 Substrates Enabled by Buffer/Seed Stack”.

[DS-12] Sho Kagami, Zhang Ruixian, Daiki Ito, Quang Le, Brian York, Cherngye Hwang, Xiaoyong Liu, Son Le, Maki Maeda, Tuo Fan, Yu Tao, Hisashi Takano, Pham Nam Hai, “Giant Perpendicular Magnetic Anisotropy in Mo / Boron-rich CoFeB / MgAl2O4 Junction for p-MTJ integration to 5-7 nm CMOS Processes”.

[CS-05] Pham Van Thuan, Ho Hoang Huy, Li Wentao, Shigeyuki Hirayama, Yushi Kato, Pham Nam Hai, “Large spin Hall effect in 300C annealed BiSb topological insulator and perpendicularly magnetized CoFeB using oxide buffer/seed and interfacial layers on Si/SiO2 substrates”.