Sheraton Hanoi Westホテルで開催されたVJSS2026国際シンポジウムで、ファム教授（招待講演）、Huy助教（口頭）、研究員の長田さん（ポスター）、博士課程のThuan君（ポスター）、修士課程のLong君（口頭）、大枝君（口頭）、佐藤君（ポスター）、連尾君（ポスター）が下記の発表を行いました。
[AQC-I1] Edge AI semiconductor: from materials to system integration
Pham Nam Hai
[AQC-O1] Highly effective and field-free spin-orbit torque switching of CoFeB/MgO using hybrid in-plane ferromagnet/BiSb topological insulator
Ho Hoang Huy and Pham Nam Hai
[AQC-O3] A new half-Heusler topological semimetal with high spin Hall conductivity and low surface roughness for SOT – MRAM applications
Trinh Dai Hoang Long, Ho Hoang Huy, and Pham Nam Hai
[AQC-O4] High Curie temperature up to 500 K in n-type ferromagnetic semiconductor (In,Fe)Sb grown on vicinal GaAs substrates
Shuzo Oeda, Masaaki Tanaka, Pham Nam Hai
[AQC-P1] Top-BiSb SOT-MRAM With a Conductive RuOx Interlayer for CMOS BEOL Process Compatibility
Pham Van Thuan, Ho Hoang Huy, Ohiro Fujie, Pham Nam Hai
[AQC-P3] Simulation of compute-in-memory (CIM) errors caused by variations in SOT-MRAM resistance
Yuki Osada and Pham Nam Hai
[AMD-P4] Nonreciprocity of Domain-Wall Motion Induced by Interlayer Dzyaloshinskii–Moriya Interaction in Magnetic Wire
Kota Sato, Shixuan Liang, Ruiyue Chu, Lei Han, Ho Hoang Huy, Pham Nam Hai, Cheng Song
[AMD-P5]: Investigation of Perpendicular Magnetic Anisotropy in Full ALD Pt/Co Bilayers for Three-Dimensional Race Track Memory
Kosei Tsureo, Kota Sato, Hu Yifan, Yuri Kishimoto and Pham Nam Hai
